Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

✍ Scribed by Nayfeh, O.M.; Chleirigh, C.N.; Hennessy, J.; Gomez, L.; Hoyt, J.L.; Antoniadis, D.A.

• Book ID: 115494387
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 539 KB
• Volume: 29
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2008.2000970