Design of CMOS T/R switch using high-substrate isolation and RF floated body for 1.9-GHz applications

✍ Scribed by Yih-Hsia Lin; Chun-Hsueh Chu; Da-Chiang Chang; Jeng Gong; Ying-Zong Juang

• Book ID: 102949429
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 710 KB
• Volume: 51
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.24577

✦ Synopsis

Abstract

In this work, two single‐pole, double‐throw CMOS transmit/receive (T/R) switches are designed for 1.9‐GHz application. Of the two T/R switches, one adopts single‐transistor architecture; the other adopts transistor‐stacking architecture to get a higher power‐handling capability. Both of the T/R switches make use of optimized transistor sizes to inherently achieve low‐insertion loss. In addition, techniques including high‐substrate isolation between transistors and RF floated body are used to further enhance the input 1‐dB compression point (IP1dB) and reduce the insertion loss of the T/R switches. The T/R switch with stacking architecture achieves a measured IP1dB of 23.5 dBm and an insertion loss of 1 dB at 1.9 GHz. The T/R switch using single‐transistor architecture achieves a very low‐insertion loss of 0.57 dB and a measured IP1dB of 21.6 dBm at 1.9 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2145–2149, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24577