A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultralow-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation ar
โฆ LIBER โฆ
Design of amplifier- and modulator-integrated laser diode for 10-Gb/s 80-km transmission
โ Scribed by In Kim; Byung-Kwon Kang; Yu-Dong Bae; Byeonghoon Park; Sang-Moon Lee; Young Hyun Kim; Dong-Hoon Jang
- Book ID
- 114569962
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 618 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1077-260X
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