## Abstract In this article, a new high Q resonator is presented and it is applied to the design of an I‐band oscillator. The measurement of the resonator itself shows that it provides a higher loaded quality factor when compared with the spiral‐resonator. The oscillator is designed to be operated
Design of a new X-band active resonator oscillator
✍ Scribed by Yeon-Joo Lee; Tae-Soon Yun; Ki-Byoung Kim; Jong-Chul Lee
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 224 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
In this paper, a microstrip active resonator oscillator (ARO) for X‐band application is presented. The ARO is implemented on Teflon substrate with relative dielectric constant of 2.52, height of 0.54 mm, and metal thickness of 0.017 mm. The ARO shows 6‐dBm output power at 10 GHz, 2^nd^‐harmonic suppression of −20.1 dBc, phase noises of −57.27 and −92 dBc/Hz at the offset frequencies of 1 and 100 kHz, respectively, and a frequency tuning range of 43.7 MHz with 0.05% output error. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 472–475, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20505
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