𝔖 Bobbio Scriptorium

✦ LIBER ✦

Design of a low-power 10 Gb/s Si bipolar 1:16-demultiplexer IC

✍ Scribed by Zhihao Lao; Langmann, U.

Book ID: 119774459
Publisher: IEEE
Year: 1996
Tongue: English
Weight: 394 KB
Volume: 31
Category: Article
ISSN: 0018-9200
DOI: 10.1109/4.485875

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A Low-Power 40-Gb/s 1:2 Demultiplexer IC

A Low-Power 40-Gb/s 1:2 Demultiplexer IC Based on a Resonant Tunneling Diode

✍ Lee, Jooseok; Lee, Jongwon; Yang, Kyounghoon 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 527 KB

PRBS generation and error detection abov

PRBS generation and error detection above 10 Gb/s using a monolithic Si bipolar IC

✍ M. Bussmann; U. Langmann; W. Hillery; W. Brown 📂 Article 📅 1994 🏛 Optical Society of America 🌐 English ⚖ 824 KB

[American Institute of Aeronautics and A

[American Institute of Aeronautics and Astronautics 16th International Communications Satellite Systems Conference - Washington,DC,U.S.A. (25 February 1996 - 29 February 1996)] 16th International Communications Satellite Systems Conference - Low complexity and low power consumption design for OBP frequency demultiplexer VLSI

✍ Qi, Ronggang; Coakley, F.; Evans, B. 📂 Article 📅 1996 🏛 American Institute of Aeronautics and Astronautics ⚖ 981 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A design concept for the low forward voltage drop 4500 V trench IGBT

✍ Nitta, T.; Uenishi, A.; Minato, T.; Kusunoki, S.; Takahashi, T.; Nakamura, H.; N 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 412 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A design concept for the low turn-off loss 4.5 kV trench IGBT

✍ Takahashi, T.; Uenishi, A.; Kusunoki, S.; Minato, T.; Nakamura, H.; Aono, S.; Na 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 374 KB

[IEEE 2002 IEEE Bipolar/BICMOS Circuits

[IEEE 2002 IEEE Bipolar/BICMOS Circuits and Technology Meeting - Minneapolis, MN, USA (29 Sept.-1 Oct. 2002)] Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting - QUBiC4G: a f/sub T//f/sub max/ = 70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz

✍ Deixler, P.; Colclaser, R.; Bower, D.; Bell, N.; De Boer, W.; Szmyd, D.; Bardy, 📂 Article 📅 2002 🏛 IEEE ⚖ 421 KB