Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert
Design of a Hamming neural network based on single-electron tunneling devices
✍ Scribed by J.G. Guimarães; L.M. Nóbrega; J.C. da Costa
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 383 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
In this paper, the first complete implementation of a Hamming neural network based on single-electron devices is presented. A large-scale network for character recognition simulation based on building block approach was successfully carried out. Simulations were done using SIMON and MATLAB softwares. Effects such as offset charges and dynamic behavior are taken into account. Moreover, room temperature operation is considered.
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