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Design of 2VDD-Tolerant Power-Rail ESD Clamp Circuit With Consideration of Gate Leakage Current in 65-nm CMOS Technology

โœ Scribed by Chang-Tzu Wang; Ming-Dou Ker


Book ID
114619992
Publisher
IEEE
Year
2010
Tongue
English
Weight
851 KB
Volume
57
Category
Article
ISSN
0018-9383

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