Design model for fully integrated high-performance linear CMOS power amplifiers
✍ Scribed by Solar, H.; Bistué, G.; Legarda, J.; Fernández, E.; Berenguer, R.
- Book ID
- 114444234
- Publisher
- The Institution of Engineering and Technology
- Year
- 2011
- Tongue
- English
- Weight
- 722 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1751-8725
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📜 SIMILAR VOLUMES
cations in the complex wave propagation environment. Similar radiation patterns for other frequencies over the operating band were also seen, and the results are not shown for brevity. Measured peak antenna gain and simulated (Ansoft HFSS) radiation efficiency versus frequency is shown in Figure 4.
This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-m 6M1P CMOS