Advances in high-density static RAM (SRAM) technology have been focused primarily on the application of pchannel polysilicon (poly-Si) thin film transistors (TFTs) as memory cell loads. The penalty, however, is that the electrical characteristics of poly-Si TFTs, such as on-current (I on ), off-curr
β¦ LIBER β¦
Design, measurement and analysis of CMOS polysilicon TFT operational amplifiers
β Scribed by Hai-Gang Yang; Fluxman, S.; Reita, C.; Migliorato, P.
- Book ID
- 119774025
- Publisher
- IEEE
- Year
- 1994
- Tongue
- English
- Weight
- 449 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0018-9200
- DOI
- 10.1109/4.293120
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## Abstract In this letter, we proposed a low power, high gain, compact ultraβwideband (UWB) low noise amplifier (LNA) using TSMC 0.18βΞΌm CMOS technology.To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilize