Characterization and fabrication of InGa
β
A. Beaurain; S. Dupont; H. W. Li; J. P. Vilcot; C. Legrand; J. Harari; M. Consta
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Article
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2003
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John Wiley and Sons
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English
β 160 KB
## Abstract InGaAsP/InP microβwaveguides are fabricated by a deep (>3 ΞΌm) Reactive Ion Etching. The devices losses are measured by the FabryβPerot technique for guide width contained between 10 ΞΌm and 0.5 ΞΌm. The measured losses range from 2 dB/mm to 14 dB/mm. Β© 2004 Wiley Periodicals, Inc. Microwa