๐”– Bobbio Scriptorium
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Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cells

โœ Scribed by Rohatgi, A.; Rai-Choudhury, P.


Book ID
111690692
Publisher
IEEE
Year
1984
Tongue
English
Weight
679 KB
Volume
31
Category
Article
ISSN
0018-9383

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This paper reports a variety of methods to reduce the peripheral or edge losses in high eciency silicon PERL (Passivated Emitter, Rear Locally-diused) cells. A MOS (Metal Oxide Semiconductor) structure was investigated as a way to passivate the peripheral region of high eciency PERL silicon solar ce