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Design approach to improve linearity and power performance of microwave FETs

✍ Scribed by P. Colantonio; F. Giannini; E. Limiti; A. Nanni; V. Camarchia; V. Teppati; M. Pirola

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 475 KB
Volume: 18
Category: Article
ISSN: 1096-4290
DOI: 10.1002/mmce.20328

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✦ Synopsis

In this article, the minimization of asymmetry between lower and upper side band intermodulation products is discussed. Base-band and harmonics termination effects are analyzed by means of a Volterra Series approach, identifying novel conditions to minimize IMD asymmetry and IM 3 power levels. The new inferred conditions do not involve base-band terminations, but harmonic load conditions. The proposed criteria are experimentally validated through harmonic load-pull measurements performed on a GaN HEMT under two-tone excitation. The resulting measurements are in agreement with the forecasted analysis results, showing an IMD asymmetry minimization, with a remarkable increase in C/I 3 of 6 dBc, without affecting the output power (34 dBm) and power added efficiency (65%) levels attained at 1 dB compression point. V

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