Design considerations for low damage pro
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M. Rahman; L.G. Deng; A. Boyd; A. Ribayrol; C.D.W. Wilkinson; J.A. van den Berg;
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Article
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1999
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Elsevier Science
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English
β 315 KB
Low ion energy is accepted as an essential requirement in achieving low damage when dry etching semiconductors. In order to investigate whether low energy is sufficient we have studied the effect of a real SiCh reactive ion etching system as well as the effect of bombardment of separate constituent