Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 ± ±6 to 10 ± ±1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp
Design and modelling of PbTe wide quantum wells based on the n–i–p–i concept
✍ Scribed by G. Span; P. Ganitzer; G. Heigl; A. Homer; J. Oswald
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 290 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Wide quantum wells (WQW) are of special interest because of their intermediate regime between 2D and 3D behaviour. According to the n-i-p-i concept, the design is based on a p-n-p structure with non-depleted n-and p-layers which form a wide quantum well (channel width 100-1000 nm). We present self-consistent model calculations for wide and multiple PbTe quantum wells in a perpendicular magnetic field. The calculations take into account the feedback of the carrier redistribution between the subband-Landau levels on the confining potential with some unusual consequences. Instead of an oscillating Fermi energy the width of the n-channel varies as a function of the magnetic field. A WQW does not allow the occurrence of integer filling factor one at high magnetic fields. In a non-periodic multiple quantum well the different potential minima are forced to match one another.
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