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Design and fabrication of the self-aligned opposed gate-source transistor

โœ Scribed by Rauschenbach, K.; Lee, C.A.

Book ID
114534468
Publisher
IEEE
Year
1992
Tongue
English
Weight
952 KB
Volume
39
Category
Article
ISSN
0018-9383

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A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of