Quantized conductance is observed in a split gate structure at temperatures up to 3BK and with bias voltages of up to 12mV. This work addresses the limited temperature range and signal levels of ballistic constrictions by a comprehensive design strategy employing two dimensional self consistent Pois
Design and fabrication of MEMS thermoelectric generators with high temperature efficiency
โ Scribed by Till Huesgen; Peter Woias; Norbert Kockmann
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 808 KB
- Volume
- 145-146
- Category
- Article
- ISSN
- 0924-4247
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โฆ Synopsis
For MEMS devices with power consumption in the range of micro-watts, thermal energy harvesting becomes a viable candidate for power supply. This paper describes a multipurpose platform to fabricate thermoelectric generators in a combined surface and bulk micromachining process. The thermocouples are deposited by thin-film processes with high integration density on the wafer surface. To provide a large thermal contact area, the heat flow path is perpendicular to the chip surface (cross-plane) and guided by thermal connectors. One thermocouple junction is thermally connected via electroplated metal stripes to the heat source and thermally insulated to the heat sink by a cavity in the wafer substrate. Simulations show that approximately 95% of the entire temperature difference over the device is located between the two thermocouple junctions. Power factors of 3.63 ร 10 -3 W mm -2 K -2 and 8.14 ร 10 -3 W mm -2 K -2 can be achieved with thermopiles made of Al and n-poly-Si or p-Bi 0.5 Sb 1.5 Te 3 and n-Bi 0.87 Sb 0.13 , respectively. Measurements of fabricated devices show a linear output voltage of 76.08 V K -1 per thermocouple and prove the feasibility of the concept.
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