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Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

✍ Scribed by S. M. Mitani; P. K. Choudhury; M. S. Alias


Publisher
Springer US
Year
2007
Tongue
English
Weight
168 KB
Volume
28
Category
Article
ISSN
1573-8760

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