## Abstract Room temperature timeโresolved fourโwave mixing has been performed in MOCVD GaN epilayers, grown on sapphire substrates by using either conventional or a 3Dโgrowth mode with Si/N treatment technique (microโELO). Picosecond pulses at 355 nm were used to create light interference pattern
โฆ LIBER โฆ
Depth-resolved observation of photoelastic effect by four-wave mixing microscopy
โ Scribed by Yasuyuki Ozeki; Takehito Kawasumi; Kazuyoshi Itoh
- Publisher
- Optical Society of Japan
- Year
- 2009
- Tongue
- English
- Weight
- 140 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1340-6000
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