𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

✍ Scribed by A. Kadys; M. Sudzius; K. Jarasiunas; Luhong Mao; Niefeng Sun

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
383 KB
Volume
133
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of differently grown Ga
Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique
✍ Jarašiūnas, K. ;Malinauskas, T. ;Aleksiejūnas, R. ;Sūdžius, M. ;Frayssinet, 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 141 KB

## Abstract Room temperature time‐resolved four‐wave mixing has been performed in MOCVD GaN epilayers, grown on sapphire substrates by using either conventional or a 3D‐growth mode with Si/N treatment technique (micro‐ELO). Picosecond pulses at 355 nm were used to create light interference pattern