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Depth profiling of GaN by cathodoluminescence microanalysis

✍ Scribed by Fleischer, K.; Toth, M.; Phillips, M. R.; Zou, J.; Li, G.; Chua, S. J.


Book ID
121829958
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
807 KB
Volume
74
Category
Article
ISSN
0003-6951

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## Abstract Cathodoluminescence is applied for evaluation of in‐plane variations of light emission from GaN‐based laser diode structures. We demonstrate that potential fluctuations affect significantly emission of laser diodes for e‐beam currents above thresholds for a stimulated emission. (Β© 2006