The semiconductor band gap of the Cu(In,Ga)Se 2 (CIGSe) compound can be varied by the In to Ga ratio. This composition variation determines the photovoltaic properties of CIGSe thin films. Their composition depth profile has to be optimized in order to obtain maximum efficiencies in solar cell appli
✦ LIBER ✦
Depth profile of the lattice constant of the Cu-poor surface layer in (Cu2Se)1−x(In2Se3)x evidenced by grazing incidence X-ray diffraction
✍ Scribed by I.M. Kötschau; H.W. Schock
- Book ID
- 108356895
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 354 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0022-3697
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