๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Depth-buffer algorithms for molecular modelling

โœ Scribed by Michael L Connolly


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
750 KB
Volume
3
Category
Article
ISSN
0263-7855

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Mechanistic modelling of the milling pro
โœ D. Roth; F. Ismail; S. Bedi ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 788 KB

A mechanistic model of the milling process based on an adaptive and local depth buffer is presented. This mechanistic model is needed for speedy computations of the cutting forces when machining surfaces on multi-axis milling machines. By adaptively orienting the depth buffer to match the current to

Distributed algorithms for depth-first s
โœ S.A.M. Makki; George Havas ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 497 KB

We present distributed algorithms for constructing a depth-first search tree for a communication network which are more efficient than previous methods. Our algorithms require 21VI -2 messages and units of time in the worst case, where IV1 is the number of sites in the network, and as little as IV1

Algorithm for depth-of-cut calculation
โœ V. A. Osipov; A. V. Grishkevich ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Springer ๐ŸŒ English โš– 351 KB
Exploring buffer space for molecular int
โœ Karl Andersson; Daphne Areskoug; Emilia Hardenborg ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 141 KB

The interaction of two molecules binding to each other is described by two rate parameters, the association rate parameter k a and the dissociation rate parameter k d . Under standardized conditions these kinetic parameters can be determined by analysis of their interaction in an affinity-based bios

Numerical algorithms for modelling micro
โœ Eric A. B. Cole; Christopher M. Snowden ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 799 KB

This paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter-Gummel formulation is presented which is compatible with dr