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Depth analysis of nickel thin films on silicon by glow discharge spectroscopy: The interface region

✍ Scribed by Zdeněk Weiss

Publisher: John Wiley and Sons
Year: 1990
Tongue: English
Weight: 457 KB
Volume: 15
Category: Article
ISSN: 0142-2421
DOI: 10.1002/sia.740151210

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✦ Synopsis

Abstract

Depth profiles of nickel thin films on silicon obtained with a Grimm glow discharge lamp operating at various conditions were compared. The best conditions for the profile analysis are: high argon pressure, high discharge current and low discharge voltage. The signal response at the interface was described quantitatively using piecewise linear model functions. Influence of the discharge parameters on the signal response at the interface was discussed. Interface broadening was confirmed to be caused by the crater effect, with a non‐uniform removal rate distribution across the analysed spot that does not depend on the total sputtered depth in the analysis of a homogeneous sample.

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