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Deposition parameters affecting epitaxial growth of single crystal films


Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
113 KB
Volume
15
Category
Article
ISSN
0042-207X

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Epitaxial Growth of Rhombohedral Boron P
โœ Y. Kumashiro; H. Yoshizawa; T. Yokoyama ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 683 KB

Rhombohedral boron phosphide (B 12 P 2 ) single crystalline films were grown at 1100ยฐC by thermal decomposition of a B 2 H 6 -PH 3 -H 2 gas mixture. The crystal quality and orientation of the films, determined by reflection high-energy electron diffraction and X-ray diffraction, are strongly influen