We have examined the fabrication conditions of epitaxial CeO 2 films on a-plane sapphire substrates, and also examined epitaxial growth of YBa 2 Cu 3 O 7Γd (YBCO) films on CeO 2 /a-plane sapphire substrate. The h=2h XRD analysis of these composite films revealed that grains of the CeO 2 and YBCO on
Deposition of TlBaCaCuO films on sapphire and CeO2/sapphire substrates
β Scribed by C.R.M. Grovenor; S.M. Morley; A.P. Bramley; J.D. O'Connor; D. Dew-Hughes; B. Pecz
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 152 KB
- Volume
- 235-240
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
Superconducting thin films of TBCCO have been prepared directly on R-plane sapphire substrates and on CeO 2 buffer layers on sapphire. The superconducting properties of the films on the buffered sapphire are quite encouraging, with Jc values in excess of 5.104 A/cm 2. However, a potential problem with this buffer layer has been identified; the formation of a BaCeO3 layer by reactionof the superconducting film with the CeO2.
π SIMILAR VOLUMES
Epitaxial CeO2 buffer layers and YBa2Cu307\_~ thin films have been grown in situ on (1].02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2 Cu3 O7-6 and A12 03 as determined by depth profiling using x-ray photoelectron spectroscopy. Th