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Dependence of the E2 and A1(LO) modes on InN fraction in InGaN epilayers

✍ Scribed by Hernández, S.; Cuscó, R.; Artús, L.; O'Donnell, K.P.; Martin, R.W.; Watson, I.M.; Nanishi, Y.; Kurouchi, M.; Van der Stricht, W.

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