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Raman scattering by the E2h and A1(LO) phonons of InxGa1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
✍ Scribed by Oliva, R.; Ibanez, J.; Cusco, R.; Kudrawiec, R.; Serafinczuk, J.; Martinez, O.; Jimenez, J.; Henini, M.; Boney, C.; Bensaoula, A.; Artus, L.
- Book ID
- 111961468
- Publisher
- American Institute of Physics
- Year
- 2012
- Tongue
- English
- Weight
- 732 KB
- Volume
- 111
- Category
- Article
- ISSN
- 0021-8979
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