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Density functional study of carbon doping in ZnO

✍ Scribed by Sakong, Sung; Kratzer, Peter


Book ID
120032959
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
307 KB
Volume
26
Category
Article
ISSN
0268-1242

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We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si 3 N 4 , the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio