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Density functional calculations for stacking faults and grain boundaries in silicon

โœ Scribed by Teichler, H. ;Sanguinetti, S.


Book ID
105383764
Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
372 KB
Volume
138
Category
Article
ISSN
0031-8965

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Using the density functional theory within the spin generalised gradient approximation (sGGA), we systematically investigate the structural, magnetic, and electronic properties of silicon crystal upon the influence of doping manganese atoms. We have also presented detailed results and comparison for