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Density functional theory study on stacking faults and twinning in Ni nanofilms

✍ Scribed by Aditi Datta; U.V. Waghmare; U. Ramamurty


Book ID
113897583
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
287 KB
Volume
60
Category
Article
ISSN
1359-6462

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## Abstract Stacking faults (SFs) in the cubic polytype of silicon carbide (3C‐SiC) can bring about the leakage current in devices or cause warping of wafers. Along with experimental efforts with the aim to reduce SFs in 3C‐SiC, theoretical approach is needed to reveal the mechanical aspects of SFs