Growth by selective area epitaxy on patt
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A.P. Roth; P. Finnie; S. Charbonneau; C. Lacelle; C. Guerini; J. Fraser; M. Buch
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Article
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1997
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Elsevier Science
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English
โ 271 KB
GalnAs/InP multilayer structures have been grown by chemical beam epitaxy in windows opened in SiO2 masks deposited on (I)01) InP substrates. The windows were narrow lines of width varying between 20 and 2pro, oriented along the [01 !] direction. The growth conditions, substratc temperature and V/Il