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Degradation of very thin gate dielectrics for MOS structures due to through-oxide ion implantation

✍ Scribed by I.J.R. Baumvol; F.C. Stedile; S. Rigo; J.-J. Ganem; I. Trimaille; G. Battistig; A. L'Hoir; W.H. Schulte; H.W. Becker

Book ID: 113284895
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 882 KB
Volume: 96
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(94)00460-9

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