Structural properties of ultrathin InGaN
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Sahonta, S.-L. ;Komninou, Ph. ;Dimitrakopulos, G. P. ;Salcianu, C. ;Thrush, E. J
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Article
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2008
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John Wiley and Sons
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English
β 682 KB
## Abstract A high indiumβcontent blue lightβemitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVDβgrown In~0.2~Ga~0.8~N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region.