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Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

✍ Scribed by Meneghini, M.; Trivellin, N.; Orita, K.; Takigawa, S.; Tanaka, T.; Ueda, D.; Meneghesso, G.; Zanoni, E.

Book ID
121716904
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
326 KB
Volume
97
Category
Article
ISSN
0003-6951

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Degradation of InGaN-based laser diodes
Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate
✍ Trivellin, N. ;Meneghini, M. ;Zanoni, E. ;Meneghesso, G. ;Orita, K. ;Yuri, M. ;T πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 294 KB

## Abstract With this paper we analyze the correlation between the degradation of InGaN‐based laser diodes (LDs) and the increase in the non‐radiative recombination rate in the active region. Several 405 nm MOCVD LDs have been submitted to CW stress, for 2000 h (stress current in the range 40–100 m