## Abstract In this work we present a reliability study of low dislocation density InGaN laser diodes fabricated on highโpressure grown GaN monocrystaline substrates. The aging process was performed under pulse current conditions. Degradation of these devices manifests primarily in the increase of
โฆ LIBER โฆ
Degradation Mechanisms of InGaN Laser Diodes
โ Scribed by Perlin, P.; Marona, L.; Leszczynski, M.; Suski, T.; Wisniewski, P.; Czernecki, R.; Grzegory, I.
- Book ID
- 114565185
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 336 KB
- Volume
- 98
- Category
- Article
- ISSN
- 0018-9219
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