𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes

✍ Scribed by Orita, K.; Meneghini, M.; Ohno, H.; Trivellin, N.; Ikedo, N.; Takigawa, S.; Yuri, M.; Tanaka, T.; Zanoni, E.; Meneghesso, G.

Book ID
117883786
Publisher
IEEE
Year
2012
Tongue
English
Weight
871 KB
Volume
48
Category
Article
ISSN
0018-9197

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Degradation Analysis of InGaN Laser Diod
Degradation Analysis of InGaN Laser Diodes
✍ KοΏ½mmler, V. ;BrοΏ½derl, G. ;Bader, S. ;Miller, S. ;Weimar, A. ;Lell, A. ;HοΏ½rle, V. πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 73 KB πŸ‘ 2 views
Degradation Mechanisms of InGaN Laser Di
Degradation Mechanisms of InGaN Laser Diodes
✍ Perlin, P.; Marona, L.; Leszczynski, M.; Suski, T.; Wisniewski, P.; Czernecki, R πŸ“‚ Article πŸ“… 2010 πŸ› IEEE 🌐 English βš– 336 KB
InGaN-based violet laser diodes
InGaN-based violet laser diodes
✍ Nakamura, S πŸ“‚ Article πŸ“… 1999 πŸ› Institute of Physics 🌐 English βš– 506 KB
Degradation of InGaN-based laser diodes
Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate
✍ Trivellin, N. ;Meneghini, M. ;Zanoni, E. ;Meneghesso, G. ;Orita, K. ;Yuri, M. ;T πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 294 KB

## Abstract With this paper we analyze the correlation between the degradation of InGaN‐based laser diodes (LDs) and the increase in the non‐radiative recombination rate in the active region. Several 405 nm MOCVD LDs have been submitted to CW stress, for 2000 h (stress current in the range 40–100 m