Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation

✍ Scribed by Hayafuji, N.; Yamamoto, Y.; Ishida, T.; Sato, K.

• Book ID: 120313338
• Publisher: American Institute of Physics
• Year: 1996
• Tongue: English
• Weight: 347 KB
• Volume: 69
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.117823