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Deformation potential constants of deep impurity centers in semiconductors with anisotropic valence band

โœ Scribed by E. B. Osipov; N. A. Osipova; M. E. Mokina; S. N. Tsvetkova; S. D. Kangliev


Book ID
111443838
Publisher
Springer
Year
2007
Tongue
English
Weight
176 KB
Volume
41
Category
Article
ISSN
1063-7826

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A variational treatment of the potential
โœ P. Csavinszky ๐Ÿ“‚ Article ๐Ÿ“… 1978 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 258 KB

## Abstract The primary purpose of the present paper consists in obtaining a correction to Dingle's potential for a (point) impurity ion (embedded) in Si or Ge. This goal is accomplished by making use of a variational principle in taking into account the effect of the spatial variation of the diele