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Deformation potential constants of acceptor impurities in InSb

โœ Scribed by R. Sharan; E.L. Heasell


Book ID
107812881
Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
587 KB
Volume
31
Category
Article
ISSN
0022-3697

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## Abstract An analysis of experimental data for InSb is made and the deformation potential constant ฯต~1~ of the conduction band is determined. It is shown that the correctly calculated value of |ฯต~1~| is about 30 eV. In the calculations of the carrier mobility for heavily doped semiconductors it i

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