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Deformation Electron-Phonon Coupling in Disordered Semiconductors and Nanostructures

✍ Scribed by Sergeev, A.; Reizer, M. Yu.; Mitin, V.


Book ID
118279174
Publisher
The American Physical Society
Year
2005
Tongue
English
Weight
89 KB
Volume
94
Category
Article
ISSN
0031-9007

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## Abstract The absorption coefficient of a disordered semiconductor, Ξ±(Ο‰), is calculated in the case of indirect transitions. The absorption coefficient is influenced by a random force field present in disordered semiconductors. The case of a smooth random field is considered. The same exponential