Results of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the performance degradation of InGaAs photodiodes are presented. The macroscopic device performance will be correlated with the radiation-induced defects observed by deep level transient spectroscopy. It was
β¦ LIBER β¦
Defects introduced by high temperature electron irradiation in n-GaAs
β Scribed by D. Stievenard; J.C. Bourgoin; D. Pons
- Publisher
- Elsevier Science
- Year
- 1983
- Weight
- 213 KB
- Volume
- 116
- Category
- Article
- ISSN
- 0378-4363
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