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The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR

✍ Scribed by N.K. Goswami; R.C. Newman; J.E. Whitehouse


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
522 KB
Volume
40
Category
Article
ISSN
0038-1098

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