๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium

โœ Scribed by Krause-Rehberg, R.; Brohl, M.; Leipner, H. S.; Drost, Th.; Polity, A.; Beyer, U.; Alexander, H.

Book ID
124054119
Publisher
The American Physical Society
Year
1993
Tongue
English
Weight
685 KB
Volume
47
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Defects properties in plastically deform
Defects properties in plastically deformed silicon studied by positron lifetime measurements
โœ Z. Wang; H.S. Leipner; R. Krause-Rehberg; V. Bodarenko; H. Gu ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 156 KB

Positron lifetime spectra have been measured in float-zone silicon plastically deformed at different temperatures. The temperature dependences of lifetime spectra were measured for all as-deformed and annealing samples. The experimental results indicate that there are three kinds of defects (vacancy

Defect Properties in Plastically Deforme
Defect Properties in Plastically Deformed p-GaAs Studied by Positron Lifetime Measurements
โœ Wang, Z. ;Wang, S.J. ;Chen, Z.Q. ;Ma, L. ;Li, S.Q. ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 175 KB ๐Ÿ‘ 2 views

Positron lifetime spectra have been measured on plastically deformed Zn-doped p-type GaAs with strain ranging from 0 to 15% at room temperature. The lifetime spectra were analyzed using PATFIT and MELT programs. Two lifetime components were observed in deformed samples. The second lifetime t 2 $ 400