Defects and impurities in SiGe: The effect of alloying
โ Scribed by A. Mesli; Vl. Kolkovsky; L. Dobaczewski; A. Nylandsted Larsen; N.V. Abrosimov
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 361 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Effective diffusion coefficients of vacancies and interstitials in a material containing impurities are derived in terms of impurity and point defect concentrations and reaction parameters. Irradiation and thermal conditions are considered. Several expressions presented earlier are reviewed. These a
A review of the selected results concerning the role of hydrostatic pressure in studies of impurity and defect centers in IIIยฑV nitrides, and in InGaAsN with small amount of N is presented. Firstly, the shallow to deep impurity state transition for basic donors, i.e. Si and O in GaN and AlGaN and th