We have grown high-quality and large-area (18 Γ 18 mm 2 ) 3C-SiC crystals on 6H-SiC seed crystals heteroepitaxially using a top-seeded solution method. The key technique here is the intentional inducement of a stacking error just at the surface of the seed crystal and crystal growth under conditions
Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC
β Scribed by Maya Marinova; Georgios Zoulis; Teddy Robert; Frederic Mercier; Alkioni Mantzari; Irina Galben; Olivier Kim-Hak; Jean Lorenzzi; Sandrine Juillaguet; Didier Chaussende; Gabriel Ferro; Jean Camassel; Efstathios K. Polychroniadis
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 389 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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