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Defect generation by hole injection in hydrogenated amorphous silicon

โœ Scribed by Cheolse Kim; Choochon Lee; Sung-Chul Shin


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
404 KB
Volume
100
Category
Article
ISSN
0038-1098

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Electron deep-trapping mobility-lifetime (/~r) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting /~r estimate upon the collection time was observed. The corre