Defect-Related Donors, Acceptors, and Tr
β
D.C. Look
π
Article
π
2001
π
John Wiley and Sons
π
English
β 108 KB
π 1 views
Point defects have been created in GaN by various types of irradiation: electrons (1 and 2.5 MeV, and the spectrum from 90 Sr); protons (0.15 MeV, 2 MeV, and 24 GeV); He ions (5.4 MeV); g-rays ( 60 Co); and sputtering and e-beam deposition of metals. They have been studied by temperaturedependent Ha