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Acceptor and donor impurities in GaN nanocrystals

✍ Scribed by Echeverría-Arrondo, C.; Pérez-Conde, J.; Bhattacharjee, A. K.


Book ID
127300289
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
666 KB
Volume
104
Category
Article
ISSN
0021-8979

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Point defects have been created in GaN by various types of irradiation: electrons (1 and 2.5 MeV, and the spectrum from 90 Sr); protons (0.15 MeV, 2 MeV, and 24 GeV); He ions (5.4 MeV); g-rays ( 60 Co); and sputtering and e-beam deposition of metals. They have been studied by temperaturedependent Ha