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Defect distribution in crystalline silicon irradiated with high-energy electrons

โœ Scribed by Yasuda, K. ;Wada, T. ;Masuda, H. ;Takeda, M. ;Iktjta, S.


Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
507 KB
Volume
88
Category
Article
ISSN
0031-8965

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Primary defect transformations in high-r
โœ L.F. Makarenko; S.B. Lastovski; F.P. Korshunov; L.I. Murin; M. Moll ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 259 KB

It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about