Difference spectra of optically induced changes in the surface photovoltage response of a-Si:H solar cells show that illumination generates two sets of near midgap states which have energy levels consistent with the two energy states for dangling bond defects in this material. Recombination of photo
โฆ LIBER โฆ
Defect distribution in a-Si:H-pin solar cells before and after degradation
โ Scribed by M. Block
- Book ID
- 115989226
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 281 KB
- Volume
- 164-166
- Category
- Article
- ISSN
- 0022-3093
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Optically induced degradation in a-Si:H
โ
D.J. Szostak; B. Goldstein
๐
Article
๐
1986
๐
Elsevier Science
โ 283 KB
Light-induced degradation of differently
โ
W. Kusian; K. Dietrich; F.H. Karg
๐
Article
๐
1989
๐
Elsevier Science
๐
English
โ 205 KB
Charge transport in a-Si: H PIN solar ce
โ
P. Garikepati; T. Xue
๐
Article
๐
1992
๐
Elsevier Science
๐
English
โ 354 KB
We have made I-V and impedance measurements on a-Si : H PIN solar cells as a function of the frequency and bias voltage to understand the mechanisms that limit the charge transport under AC excitation. The measurements covered the range of frequencies from 1 Hz to 1 MHz. It is concluded that the int
Kinetics of light induced degradation in
โ
Liang-fan Chen; Liyou Yang
๐
Article
๐
1991
๐
Elsevier Science
๐
English
โ 268 KB
Distribution of charged defects in a:Si๎ธ
โ
Hongyue Liu; L. Jiao; S. Semoushkina; C.R. Wronski
๐
Article
๐
1996
๐
Elsevier Science
๐
English
โ 275 KB
Study of a-Si:H/a-Si:H/ฮผc-Si:H PIN Type
โ
X.X. Zheng; X.D. Zhang; S.S. Yang; S.Z. Xu; C.C. Wei; J. Sun; X.H. Geng; Y. Zhao
๐
Article
๐
2012
๐
Elsevier
๐
English
โ 805 KB